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Double-side step-graded AlGaN electron blocking layer for nearly droop-free GaN-based blue LEDs

  • Published:2019-08 Issue: Volume:132 Page:106167
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Prasad Suraj,Mondal Ramit Kumar,Chatterjee Vijay,Pal Suchandan

Funder

office of Principal Scientific Advisor to the Govt. of India for sponsoring the project

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Prospects for LED lighting;Gee,2004

2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening;Fujii;Appl. Phys. Lett.,2004

3. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions;Cheng;Sci. Rep.,2016

4. Optimization of structure parameters for highly efficient AlGaN based deep ultraviolet light emitting diodes;Mondal;Superlattice. Microst.,2017

5. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes;Zhou;Sci. Rep.,2018

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2. 基于双凹型波导层的深紫外激光二极管辐射复合特性;Laser & Optoelectronics Progress;2023

3. 基于空穴存储层的深紫外激光二极管性能优化;Laser & Optoelectronics Progress;2022

4. Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes;Optical and Quantum Electronics;2021-10-19

5. p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode;Superlattices and Microstructures;2021-10
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