Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-021-03300-4.pdf
Reference38 articles.
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3. Chang, Y.-A., Chang, J.-Y., Kuo, Y.-T., Kuo, Y.-K.: Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer. Appl. Phys. Lett 100, 251102–251104 (2012)
4. Chen, J.-R., Wu, Y.-C., Ling, S.-C., Ko, T.-S., Lu, T.-C., Kuo, H.-C., et al.: Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes. Appl. Phys. B 98, 779–789 (2010)
5. Crawford, M.H.: LEDs for solid-state lighting: performance challenges and recent advances. IEEE J. Sel. Top. Quantum Electron. 15, 1028–1040 (2009)
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