Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4729880
Reference21 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. Nitride-based green light-emitting diodes with high temperature GaN barrier layers
4. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
5. Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
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3. Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD;Superlattices and Microstructures;2021-04
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