The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes-Reference-Cited by-同舟云学术

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The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

Published:2018-07-23 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Zhou Shengjun,Liu Xingtong,Yan Han,Gao Yilin,Xu Haohao,Zhao Jie,Quan Zhijue,Gui Chengqun,Liu Sheng

Funder

National Natural Science Foundation of China (National Science Foundation of China)

National Key Research and Development Program of China (No. 2017YFB1104900)

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-29440-4.pdf

Reference61 articles.

1. Auf der, D. M., Pecchia, A., Penazzi, G., Rodrigues, W. & Di, C. A. Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations. Phys. Rev. Lett. 116, 027401 (2016).

2. Ponce, F. A. & Bour, D. P. Nitride-based semiconductors for blue and green light-emitting devices. Nature 386, 351–359 (1997).

3. Tsai, Y. L. et al. Bridging the “green gap” of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals. Nanoscale 8, 1192–1199 (2015).

4. Nakamura, S., Mukai, T. & Senoh, M. High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes. J. Appl. Phys. 76, 8189–8191 (1994).

5. Odonnell, K. P., Der Maur, M. A., Carlo, A. D. & Lorenz, K. It’s not easy being green: strategies for all-nitrides, all-colour solid state lighting. Phys. Status Solidi RRL 6, 49–52 (2012).

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