Design and simulation of oxide and doping engineered lateral bipolar junction transistors for high power applications

Author:

Loan Sajad A.,Bashir Faisal,Akhoon M. Saqib,Alamoud Abdulrahman M.

Funder

King Saud University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Lateral high speed bipolar transistors on SOI for RF SoC applications;Sun;IEEE Trans. Electron Devices,2005

2. A simulation study on thin SOI bipolar transistors with fully or partially depleted collector;Quyang;IEEE BCTM,2002

3. Bipolar transistor on thin SOI: concept, status and prospect;Cai,2004

4. Why BiCMOS and SOI BiCMOS;Ning;IBM J. Res Dev.,2002

5. A high performance charge plasma based lateral bipolar junction transistor on selective buried oxide;Loan;Semicond. Sci. Technol.,2014

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