Design and simulation of high-performance lateral bipolar junction transistor on partial buried oxide
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217.2016.1191088
Reference38 articles.
1. Analog performance of double gate SOI transistors
2. A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect
3. Partial-SOI isolation structure for reduced bipolar transistor parasitics
4. Hybrid Integration of Ultrathin-Body Partially Insulated MOSFETs and a Bulk MOSFET for Better IC Performance: A Multiple-$V_{\rm TH}$ Technology Using Partial SOI Structure
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