A Charge Balanced Vertical Power MOSFET with Record High Balliga’s Figure of Merit: Design and Investigation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01141-0.pdf
Reference31 articles.
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2. Adler MS, Owyang KW, Baliga BJ, Kokosa RA (1984) The evolution of power device technology. IEEE Trans Electron Devices 31:1570–1591
3. Saxena RS, Kumar MJ (2012) Polysilicon spacer gate technique to reduce gate charge of a trench power MOSFET. IEEE Trans Electron Devices 59:738–744
4. Loan SA, Qureshi S, Iyer SSK (2009) A novel high breakdown laterals BJT on SOI with Multizone doped and multistep oxide: A numerical simulation study. IOP Semiconductor Science and Technology 24(2)
5. Fujihira T (1997) Theory of semiconductor superjunction devices. Jpn J Appl Phys 36:6254–6262
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