Analog/RF performance of AlInN/GaN underlap DG MOS-HEMT
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference47 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
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3. International Electron Devices Meeting IEDM-06;Medjdoub,2006
4. Barrier-Layer Scaling of InAlN/GaN HEMTs
5. InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess
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