A novel 4H–SiC MESFET with recessed gate and channel
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference24 articles.
1. New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer;Jun;Chin. Phys. B,2012
2. Total dose radiation response of CMOS compatible SOI MESFETs;Spann;IEEE Trans. Nucl. Sci.,2005
3. Transient simulation of microwave SiC MESFETs with improved trap models;Hjelmgren;IEEE Trans. Electron Dev.,2010
4. High-gain SiC MESFETs using source-connected field plates;Sriram;IEEE Trans. Electron Dev.,2009
5. Dual-channel 4H–SiC metal semiconductor field effect transistors;Zhu;Solid-State Electronic,2007
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1. Normally-off n-ZnO/p-diamond heterojunction field effect transistor with recessed gate and current distribution layer;Microelectronics Journal;2023-12
2. Improved multi-recessed p-buffer 4H–SiC metal-semiconductor field-effect transistor with high power added efficiency;Current Applied Physics;2023-05
3. A novel 4H–SiC MESFET with P-type doping zone and recessed buffer layer;Materials Science in Semiconductor Processing;2022-06
4. Improved 4H–SiC MESFET with bulgy channel;Micro and Nanostructures;2022-06
5. An Improved 4H-SiCMESFET with Un-Doped and Recessed Area under the Gate for High Power Applications;Silicon;2020-09-13
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