New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Simulation of high-power 4H-SiC MESFETs with 3D tri-gate structure
2. Two-stage ultrawide-band 5-W power amplifier using SiC MESFET
3. Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
4. Microwave power and simulation of S-band SiC MESFETs
5. High breakdown voltage 4H-SiC MESFETs with floating metal strips
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region;Micromachines;2021-04-26
2. An Improved 4H-SiCMESFET with Un-Doped and Recessed Area under the Gate for High Power Applications;Silicon;2020-09-13
3. Improved Performance of Stair-Stepping Buffer-Gate 4H Silicon Carbide Metal Semiconductor Field Effect Transistor;Integrated Ferroelectrics;2020-07-01
4. Improved DRUS 4H-SiC MESFET with High Power Added Efficiency;Micromachines;2019-12-27
5. Modeling of Drain Induced Barrier Lowering Effect for Bi-Material Buffer Gate 4H-SiC Metal Semiconductor Field Effect Transistor;Ferroelectrics;2019-07-04
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