A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region-Reference-Cited by-同舟云学术

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Published:2021-04-26 Issue:5 Volume:12 Page:488
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Jia Hujun,Dong Mengyu^ORCID,Wang Xiaowei,Zhu Shunwei^ORCID,Yang Yintang

Abstract

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

Funder

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

Link

https://www.mdpi.com/2072-666X/12/5/488/pdf

Reference23 articles.

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