Comparison between GaN and SiC for power switching transistor application

Abstract

Abstract Semiconductor has been widely used in industry ever since its invention and has experienced three generations. However, there are still many problems existing in the third generation semiconductors industry such as making process and cost. This paper mainly discusses the differences between GaN and SiC in material properties and fabrication process. Material properties include band-gap, critical field strength, carrier mobility, and thermal conductivity. For fabrication process, GaN is normally used homoepitaxy approach and SiC is used heteroepitaxy approach. The details in these two approaches are given in the paper.