Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Commercial SiC device processing: Status and requirements with respect to SiC based power devices
2. An SiC MESFET-Based MMIC Process
3. Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs
4. Fabrication and characterization of field-plated buried-gate SiC MESFETs
5. Dual-channel 4H-SiC metal semiconductor field effect transistors
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1. Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers;Chinese Physics B;2016-07-26
2. High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier;Chinese Physics B;2013-01
3. Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor;Chinese Physics B;2012-09
4. Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor;Chinese Physics B;2012-03
5. Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors;Chinese Physics B;2012-01
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