Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/21/9/097302/pdf
Reference11 articles.
1. Two-stage ultrawide-band 5-W power amplifier using SiC MESFET
2. Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
3. Microwave power and simulation of S-band SiC MESFETs
4. High breakdown voltage 4H-SiC MESFETs with floating metal strips
5. High-Gain SiC MESFETs Using Source-Connected Field Plates
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1. Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs;ECS Journal of Solid State Science and Technology;2019
2. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values;Chinese Physics B;2015-02
3. Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate;Chinese Physics B;2014-01
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