Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate-Reference-Cited by-同舟云学术

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Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate

Published:2013-08 Issue: Volume:60 Page:500-507
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mohd Yusoff M.Z.,Mahyuddin A.,Hassan Z.,Yusof Y.,Ahmad M.A.,Chin C.W.,Hassan H. Abu,Abdullah M.J.

Funder

Universiti Sains Malaysia

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Growth and applications of Group III-nitrides

2. Thermal expansion of some diamondlike crystals

3. W.J. Meng, J.H. Edgar (Eds.), Properties of Group III Nitrides, INSPEC, London, 1994, p. 22.

4. Study on the AlN/Si interface properties

5. AlGaN photodetectors grown on Si(111) by molecular beam epitaxy

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