AlGaN photodetectors grown on Si(111) by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Semiconductor ultraviolet detectors
2. Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy
3. High electron mobility AlGaN/GaN heterostructure on (111) Si
4. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
5. Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)
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4. Rapid fabrication and packaging of AlGaN/GaN high-temperature ultraviolet photodetectors using direct wire bonding;Journal of Physics D: Applied Physics;2016-06-21
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