The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles

Author:

Ambartsumov M.G.ORCID,Tarala V.A.,Krandievsky S.O.,Kravtsov A.A.,Sautiev A.B.,Mitrofanenko L.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference39 articles.

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2. Nanopatterned aluminum nitride template for high efficiency light-emitting diodes;Baek;Opt. Express,2009

3. D. Hanser, E.A. Preble, T. Clites, T. Stephenson, R. Jacobs, T. Johnson, T. Paskova, K.R. Evans, PVD of AlN Nucleation Layers for GaN-based LED Structures: A Cheaper and Brighter Alternative, Growth (Lakeland). (2009). https://csmantech.org/OldSite/Digests/2009/2009 Papers/9.4.pdf.

4. Group III-nitride lasers: a materials perspective;Hardy;Mater. Today,2011

5. Study of structural and microstructural properties of AlN films deposited on silicon and quartz substrates for surface acoustic wave devices;Assouar;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,2004

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