Ni–Al ohmic contact to p-type 4H-SiC-Reference-Cited by-同舟云学术

Ni–Al ohmic contact to p-type 4H-SiC

Published:2006-10 Issue:4-6 Volume:40 Page:626-631
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Vang H.,Lazar M.,Brosselard P.,Raynaud C.,Cremillieu P.,Leclercq J.-L.,Bluet J.-M.,Scharnholz S.,Planson D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. R.C. Clarke, C.D. Brandt, S. Sriram, R.R. Siergiej, A.W. Morse, A.K. Agarwal, L.S. Chen, V. Balakrishna, A.A. Burk, High-temperature Electronic Materials, Devices and Sensors Conference, 1998, p. 18

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

4. Titanium and aluminum-titanium ohmic contacts to p-type SiC

5. Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing

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