Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 ℃ environment-Reference-Cited by-同舟云学术

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Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 ℃ environment

Published:2022-08 Issue: Volume:592 Page:126735
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lei Cheng,Li Qiang,Liang Ting,Liu RuiFang,Li YongWei,Zhou XingJian,Jia Pinggang,Ghaffar Abdul,Xiong JiJun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Damage in aligned fibre SiC/Al quantified using a laboratory X-ray tomographic microscope[J];Breunig;Composites,1993

2. Application of SiC power electronic devices in secondary power source for aircraft[J];Xun;Renew. Sustain. Energy Rev.,2017

3. Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices[J];Yang;J. Semicond.,2017

4. Power cell design and assessment methodology based on a high-current 10-kv sic mosfet half-bridge module[J];Mocevic;IEEE Journal of Emerging and Selected Topics in Power Electronics,2021

5. Surface roughening in ion implanted 4H-silicon carbide[J];Capano;J. Electron. Mater.,1999

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetics of diffusion and phase formation in a solid-state reaction in Al/Au thin films;Journal of Alloys and Compounds;2024-10

2. Study on high temperature reliability of electrical interconnection material of SiC pressure sensor;Journal of Materials Science: Materials in Electronics;2024-04

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