Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707215
Reference35 articles.
1. Thermally stable low ohmic contacts to p-type 6HSiC using cobalt silicides
2. Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide
3. High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
4. Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applications
5. Contact resistance measurements onp‐type 6H‐SiC
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