Barrier height enhancement and temperature dependence of the electrical characteristics of Al Schottky contacts on p-GaAs with organic Rhodamine B interfacial layer
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference49 articles.
1. Physics of Semiconductor Devices;Sze,2007
2. Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy
3. Studying of barrier height and ideality factor relation in the nano sized Au-n type Si Schottky diodes
4. Properties of gallium- and aluminum-doped bulk ZnO obtained from single-crystals grown by liquid phase epitaxy
5. Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes
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