The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and series resistance on the electrical characteristics and the sources of them-Reference-Cited by-同舟云学术

The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and series resistance on the electrical characteristics and the sources of them

Published:2019-09 Issue:18 Volume:30 Page:17032-17039
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Altındal Yerişkin Seçkin

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-019-02045-x.pdf

Reference42 articles.

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2. M.S. Pratap Reddy, L. Jung-Hee, J. Ja-Soon, Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer. Synth. Met. 185–186, 167–171 (2013)

3. S. Altındal Yerişkin, M. Balbaşı, İ. Orak, The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J. Mater. Sci. 28, 14040–14048 (2017)

4. P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, V. Shim-Hoon Yuk, Rajagopal Reddy, Jae-Chan Jeong, Sung-Nam Lee, Chel-Jong Choi, Modification of Schottky barrier properties of Ti/p-type InP Schottky diode by polyaniline (PANI) organic interlayer. J. Semicond. Technol. Sci. 16, 664–674 (2016)

5. M. Sharma, S.K. Tripathi, Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA:n-ZnSe Schottky barrier diodes. Mater. Sci. Semicond. Process. 41, 155–161 (2016)

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