Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes-Reference-Cited by-同舟云学术

Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Published:2006-10 Issue:4-6 Volume:40 Page:399-404
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Bluet J.M.,Ziane D.,Guillot G.,Tournier D.,Brosselard P.,Montserrat J.,Godignon P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Performance and Reliability Issues of SiC-Schottky Diodes

2. J. Millan, P. Godignon, D. Tournier, 24th-International-Conference-on-Microelectronics-(Nis Serbie-Montnegro), IEEE-Cat.-No.04TH8716, 2004, pp. 417–420

3. A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

4. D. Tournier, P. Waind, P. Godignon, J. Millan, R. Bassett, International Conference on SiC and Related Materials, Pittsburgh, USA, September 2005, Materials Science Forum (in press)

5. Barrier inhomogeneities at Schottky contacts

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