Thin-film temperature sensors based on LPD-fabricated β-Ga2O3 Schottky diodes

Author:

Paul Sanjoy1ORCID,Chen Tai-Siang2ORCID,Houng Mau-Phon2,Li Jian V.3ORCID

Affiliation:

1. Advanced Materials and Liquid Crystal Institute, Kent State University, Kent, Ohio 44242, USA

2. Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

3. Department of Aeronautics and Astronautics, National Cheng Kung University, Tainan 701, Taiwan

Abstract

We report the synthesis of wide-bandgap β-Ga2O3 nanocrystalline thin films via the low-cost and non-vacuum-based liquid phase deposition (LPD) method. The morphological evolution of the nanocrystalline β-Ga2O3 grains was investigated as a function of the growth temperature, processing time, and pH value of the precursor solution. We successfully calcined gallium oxide hydroxide GaO(OH) through a 3-h annealing process at 800 °C to convert it into β-Ga2O3. We fabricated horizontal-structured Ni/β-Ga2O3 Schottky diodes and investigated the electrical characteristics pertinent to sensing temperature in the range of 100−800 K. The temperature sensitivity of the Ni/β-Ga2O3 Schottky-junction temperature sensors, defined as the temperature dependence of junction voltage at a fixed bias current of 10 µA, peaked at −2.924 mV/K in the range between 300 and 500 K. At room temperature, we measured a barrier height of 0.915 eV and a Richardson constant of 43.04 ± 0.01 A/cm2 K2 from the Ni/β-Ga2O3 Schottky junctions. These results indicate that the LPD-synthesized β-Ga2O3 material and devices hold promising potential for sensing applications especially at high temperatures.

Funder

Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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