Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Illumination with solid state lighting technology
2. High-power AlGaInN flip-chip light-emitting diodes
3. Low Resistance and Reflective Mg-Doped Indium Oxide–Ag Ohmic Contacts for Flip-Chip Light-Emitting Diodes
4. Development of an assembly process and reliability investigations for flip-chip LEDs using the AuSn soldering
5. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of thermal stability of Ag-based reflector in GaN-based flip chip LEDs by electron-beam irradiation;physica status solidi (a);2017-02-17
2. Thermal Stability and Sulfidizing Resistance of High Reflective Multilayered Sn/Ag3Sn and Sn/Ag Films Electrodeposited on Cu Alloy Sheets;Electrochimica Acta;2016-09
3. Improved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with La additive;Superlattices and Microstructures;2013-05
4. Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer;Superlattices and Microstructures;2012-09
5. Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode;Optics Express;2012-08-06
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