Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference19 articles.
1. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
2. Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system
3. Optical patterning of GaN films
4. Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
5. High performance thin-film flip-chip InGaN–GaN light-emitting diodes
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1. Ag nanodot/Mg/Al reflective Ohmic contacts simultaneously suitable for n-type and p-type GaN;Journal of Physics D: Applied Physics;2023-04-03
2. Optimization of annealing conditions for Ag/p–GaN ohmic contacts;Applied Physics A;2021-10-25
3. Origin of operating voltage increase in deep UV light-emitting diodes with ITO/Al reflector;Japanese Journal of Applied Physics;2021-10-21
4. Optimization of Ni/Ag-Based Reflectors to Improve the Performance of 273 nm Deep Ultraviolet AlGaN-Based Light Emitting Diodes;ECS Journal of Solid State Science and Technology;2021-04-01
5. Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode;ECS Journal of Solid State Science and Technology;2020-02-19
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