Investigation of rapid degradation in GaN-based blue laser diodes

Author:

Wen PengyanORCID,Zhang Shuming,Li Deyao,Liu Jianping,Zhang Liqun,Shi Dong,Zhou Kun,Tian Aiqin,Feng Shiwei,Yang Hui

Funder

National Natural Science Foundation of China

National High Technology Research and Development Program of China

Science and Technology Support Project of Jiangsu Province

Strategic Priority Research Program of the Chinese Academy of Science

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Characteristics of GaN-based laser diodes for post-DVD application;Nam;Phys. Status Solidi (a),2004

2. Recent progress of high-power InGaN blue-violet laser diodes;Ryu;Proc. SPIE,2006

3. Highly stable temperature characteristic of InGaN blue laser diodes;Ryu;Appl. Phys. Lett.,2006

4. Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence;Meneghini;Appl. Phys. Lett.,2013

5. Identification of degradation mechanisms based on thermal characteristics of InGaN/GaN laser diodes;Wen;IEEE J. Sel. Top. Quantum Electron,2015

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2. Reliability Research of GaN-Based blue Semiconductor Lasers;2021 3rd International Conference on System Reliability and Safety Engineering (SRSE);2021-11

3. Degradation study of InGaN-based laser diodes grown on Si;Journal of Physics D: Applied Physics;2020-07-13

4. Rapid degradation of InGaN/GaN green laser diodes;Superlattices and Microstructures;2020-06

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