Reliability Research of GaN-Based blue Semiconductor Lasers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Reliability Research of GaN-Based blue Semiconductor Lasers

Published:2021-11 Issue: Volume: Page:
ISSN:
Container-title:2021 3rd International Conference on System Reliability and Safety Engineering (SRSE)
language:
Short-container-title:

Author:

Zhang Chengwei¹,Liao Wenyuan²,Yang Shaohua²,Wang Hongran¹,Wei Zhipeng³,Lu Guoguang²

Affiliation:

1. Changchun University of Science and Technology,State Key Laboratory of High Power Semiconductor Lasers,Changchun,China

2. The No.5 Electronics Research, Institute of the Ministry of Industry and Information Technology,State Key Laboratory,Changchun,China

3. State Key Laboratory of High Power Semiconductor Lasers

Funder

Changchun university of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9694273/9693572/09694420.pdf?arnumber=9694420

Reference31 articles.

1. Study on Cavity Nitrogen Passivation in High Power Semiconductor Laser[J];he;Laser & Infrared,2016

2. Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes

3. Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes

4. Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution;Advanced Photonics Research;2024-09-04

2. Effect of AlN/GaN supercycle ratio on properties of AlxGa1−xN films using super-cycle plasma enhanced atomic layer deposition;Journal of Alloys and Compounds;2024-01

3. Effect of Al/Ga Elemental Ratio on Properties of Alxga1-Xn Films Using Super-Cycle Plasma Enhanced Atomic Layer Deposition;2023

4. Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures;Molecules;2022-11-22

5. Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials;Materials Research Express;2022-06-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3