In-situ and post deposition analysis of laser MBE deposited GaN films at varying nitrogen gas flow

Author:

Dewan Sheetal,Tomar Monika,Tandon R.P.,Gupta Vinay

Funder

Meity

Government of India

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference20 articles.

1. Progress and prospects of group-III semiconductors;Mohammad,1996

2. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays;Denbaars;Acta Mater.,2013

3. InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate;Lee;ACS Photonics,2018

4. Fabrication and performance of GaN electronic devices;Pearton;Mater. Sci. Eng. R Rep.,2000

5. Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates;Liu;J. Cryst. Growth,2014

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