Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence-Reference-Cited by-同舟云学术

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

Published:2013-12-02 Issue:23 Volume:103 Page:233506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Meneghini M.,Carraro S.,Meneghesso G.,Trivellin N.,Mura G.,Rossi F.,Salviati G.,Holc K.,Weig T.,Schade L.,Karunakaran M. A.,Wagner J.,Schwarz U. T.,Zanoni E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4834697

Reference15 articles.

1. Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes

2. Facet degradation of GaN heterostructure laser diodes

3. Degradation Mechanisms of InGaN Laser Diodes

4. Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes

5. Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

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