Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes-Reference-Cited by-同舟云学术

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Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes

Published:2010-07 Issue:7 Volume:98 Page:1208-1213
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Tomiya Shigetaka,Goto Osamu,Ikeda Masao

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/5485026/05340678.pdf?arnumber=5340678

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution;Advanced Photonics Research;2024-09-04

2. Wavelength-Tunable Microlasers Based on Perovskite Sheets Processed from the Solution Saturation-Controlled Method;The Journal of Physical Chemistry C;2024-04-24

3. Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers;Crystals;2022-05-26

4. Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers;physica status solidi (RRL) – Rapid Research Letters;2021-12-13

5. Reliability Research of GaN-Based blue Semiconductor Lasers;2021 3rd International Conference on System Reliability and Safety Engineering (SRSE);2021-11

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