Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity-Reference-Cited by-同舟云学术

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Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity

Published:2015-12 Issue: Volume:88 Page:354-364
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Verma Jay Hind Kumar,Haldar Subhasis,Gupta R.S.,Gupta Mridula

Funder

Council of Scientific and Industrial Research (C.S.I.R.)

University Grant Commission (U.G.C)

Government of India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Explicit model for the gate tunneling current in double-gate MOSFETs;Chaves;Solid State Electron,2012

2. Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors;Martinez;IEEE Trans. Electron Devices,2011

3. Unexpected mobility degradation for very short devices : a new challenge for CMOS scaling;Cros;IEDM Tech. Dig.,2006

4. High-performance flexible thin-film transistors exfoliated from bulk wafer;Zhai;Nano Lett.,2012

5. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors;Ferain;Nature,2011

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1. Characterisation and Analysis of Schottky-Tube FET exhibiting Superior Characteristic Parameters;Arabian Journal for Science and Engineering;2022-09-06

2. Performance Analysis of Fully Depleted SOI (FD-SOI) MOSFET Incorporating Dielectric Engineering;IOP Conference Series: Materials Science and Engineering;2022-03-01

3. Analytical Modeling of Cylindrical Surrounding Double-Gate MOSFET Including Channel Quantum Confinement;Silicon;2022-01-19

4. Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET for Low Power Applications;Silicon;2021-09-29

5. A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor;Acta Physica Sinica;2021

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