Analytical Modeling of Cylindrical Surrounding Double-Gate MOSFET Including Channel Quantum Confinement
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01558-7.pdf
Reference33 articles.
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4. Duarte JP, Choi SJ, Moon DI, Ahn JH, Kim JY, Kim S, Choi YK (2013) A universal core model for multiple-gate field-effect transistors. Part II: drain current model. IEEE Trans Electron Devices 60(2):848–855
5. Wu YS, Pin S (2009) Analytical quantum-confinement model for short-channel gate-all-around MOSFETs under subthreshold region. IEEE Trans Electron Devices 56(11):2720–2725
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