Influence of metal work function and incorporation of Sr atom on WO 3 thin films for MIS and MIM structured SBDs-Reference-Cited by-同舟云学术

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Influence of metal work function and incorporation of Sr atom on WO 3 thin films for MIS and MIM structured SBDs

Published:2018-07 Issue: Volume:119 Page:134-149
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Marnadu R.,Chandrasekaran J.,Raja M.,Balaji M.,Maruthamuthu S.,Balraju P.

Funder

DST, Government of India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference49 articles.

1. Negative differential resistance in the I–V curves of Al2O3/AlGaN/GaN MIS structures;Shen;RSC Adv.,2016

2. Additional electric field in real trench MOS barrier Schottky diode;Mamedov;Superlattice. Microst.,2016

3. Field and temperature dependent current-voltage characteristics of Al-LU2O3-Al metal-insulator-metal diodes;Akbar;Physica B,2017

4. Current-voltage characteristics of Au/PLiMMA/n-Si diode under ultraviolet irradiation;Culcu;J. Phys. Chem. Solid.,2017

5. A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer;Kaya;Int. J. Mod. Phys. B,2016

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