Negative differential resistance in the I–V curves of Al2O3/AlGaN/GaN MIS structures-Reference-Cited by-同舟云学术

Negative differential resistance in the I–V curves of Al2O3/AlGaN/GaN MIS structures

Published:2016 Issue:7 Volume:6 Page:5671-5676
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Shen Lingyan¹²³⁴⁵,Cheng Xinhong¹²³⁴⁵,Wang Zhongjian¹²³⁴⁵,Cao Duo¹²³⁴⁵,Li zheng Li zheng¹²³⁴⁵,Wang Qian¹²³⁴⁵,Zhang Dongliang¹²³⁴⁵,Li Jingjie¹²³⁴⁵,Yu Yuehui¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics

2. Shanghai Institute of Microsystem and Information Technology

3. Chinese Academy of Sciences

4. Shanghai 200050

5. P.R. China

Abstract

Negative differential resistance is firstly observed in I–V characteristic of GaN MIS structure, which is induced by intervalley electron transfer.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA22356C

Reference26 articles.

1. Microwave oscillations of current in III–V semiconductors

2. Mechanism of the Gunn Effect from a Pressure Experiment

3. Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering

4. Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy

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