A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer

Author:

Kaya A.1,Çetinkaya H. G.2,Altındal Ş.2,Uslu İ.3

Affiliation:

1. Department of Opticianry, Vocational School of Medical Sciences, Turgut Özal University, Ankara 06370, Turkey

2. Department of Physics, Faculty of Sciences, Gazi University, Ankara 06500, Turkey

3. Department of Chemistry, Chemistry Education Department, Gazi University, Ankara 06900, Turkey

Abstract

In order to compare the main electrical parameters such as ideality factor [Formula: see text], barrier height (BH) [Formula: see text], series [Formula: see text] and shunt [Formula: see text] resistances and energy density distribution profile of surface states [Formula: see text], the [Formula: see text]-[Formula: see text] (MS) Schotthy diodes (SDs), with and without interfacial [Formula: see text] layer were obtained from the current–voltage [Formula: see text]–[Formula: see text] measurements at room temperature. The other few electrical parameters such as Fermi energy level [Formula: see text], BH [Formula: see text]), [Formula: see text] and voltage dependence of [Formula: see text] profile were also obtained from the capacitance–voltage [Formula: see text]–[Formula: see text] measurements. The voltage dependence of [Formula: see text] profile has two distinctive peaks in the depletion region for two diodes and they were attributed to a particular distribution of [Formula: see text] located at metal–semiconductor (MS) interface. All of these results have been investigated at room temperature and results have been compared with each other. Experimental results confirmed that interfacial [Formula: see text] layer enhanced diode performance in terms of rectifier rate [Formula: see text] at [Formula: see text], [Formula: see text] [Formula: see text]at [Formula: see text] and [Formula: see text] [Formula: see text] with values of 265, [Formula: see text] and [Formula: see text] for MS type Schottky barrier diode and [Formula: see text], [Formula: see text] and [Formula: see text] for metal–insulator–semiconductor (MIS) type SBD, respectively. It is clear that the rectifying ratio of MIS type SBD is about 9660 times greater than MS type SBD. The value of barrier height (BH) obtained from [Formula: see text]–[Formula: see text] data is higher than the forward bias [Formula: see text]–[Formula: see text] data and it was attributed to the nature of measurements. These results confirmed that the interfacial [Formula: see text] layer has considerably improved the performance of SD.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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