Temperature dependent current- and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique-Reference-Cited by-同舟云学术

Temperature dependent current- and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique

Published:2020-11 Issue: Volume:118 Page:105204
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Baltakesmez A.,Tekmen S.,Güzeldir B.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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