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Additional electric field in real trench MOS barrier Schottky diode

  • Published:2016-04 Issue: Volume:92 Page:1-9
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Mamedov R.K.,Aslanova A.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Metal – Semiconductor Contacts with Electric Spots Field;Mamedov,2003

3. Primeneniye contacta metal – poluprovodnik v electronice;Valiyev,1981

4. Influencia de la geometria en el voltaje de ruptura de la union metal-semiconductor;Sere;Ciencias tecnicas: Ing. Electr.autom. y comun.,1978

5. Enhancement of breakdown voltages Schottky diodes with a tapered window;Choi;IEEE Trans. Electron Devices,1981

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1. Advanced Vertical Diamond Diodes with Trench Structure towards High Performances;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Influence of Geometrical Dimensions on Negative Differential Resistance in Silicon Based Trench MOS Barrier Schottky Diode;Journal of Physics: Conference Series;2021-01-01

3. Research on the Negative Resistance Characteristics of Silicon-based Trench MOS Barrier Schottky Diodes;Journal of Physics: Conference Series;2020-11-01

4. Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current;IEEE Transactions on Electron Devices;2020-05

5. Features of current transport in Schottky diodes with additional electric field;Superlattices and Microstructures;2019-12
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