Features of current transport in Schottky diodes with additional electric field-Reference-Cited by-同舟云学术

Features of current transport in Schottky diodes with additional electric field

Published:2019-12 Issue: Volume:136 Page:106297
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mamedov R.K.,Aslanova A.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Metall-semiconductor Contacts;Rhoderick,1988

3. Contacts Metal–Semiconductor with an Electric Spots Field;Mamedov,2003

4. The nature of forward and reverse saturation currents in metal-semiconductor contacts with a Schottky barrier;Torkhov;Phys. Technol. Semicond.,2010

5. Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process;Sato;Appl. Surf. Sci.,2001

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area;Journal of Vacuum Science & Technology B;2023-09-26

2. An experimental study: Dependence of Schottky diode parameters on Schottky contact area size;Optical Materials;2023-08

3. Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes;Journal of Vacuum Science & Technology B;2023-03

4. Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range;Journal of Electronic Materials;2022-12-08

5. Influence of Geometrical Dimensions on Negative Differential Resistance in Silicon Based Trench MOS Barrier Schottky Diode;Journal of Physics: Conference Series;2021-01-01