New GaN based HEMT with Si 3 N 4 or un-doped region in the barrier for high power applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Mobility of the two-dimensional electron gas in DA-pHEMT hetero-structures with various δ–n-Layer profile widths;Protasov;Semiconductors,2018
2. Evaluation and reliability assessment of GaN-on-Si MIS-HEMT for power switching applications;Chou;Energies,2017
3. Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro thermal Monte Carlo simulations;Garcia;Semicond. Sci. Technol.,2016
4. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor;Luo;Chin. Phys. B,2016
5. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage;Juncai;J. Semiconduct.,2012
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2. Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification;IEEE Access;2021
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4. The Influence of Alkaline Earth Elements on Electronic Properties of α-Si3N4 via DFT Calculation;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2020-10
5. Assessment of Dual-Gate AlGaN/GaN MISHEMT for high temperature DC to DC converter;Superlattices and Microstructures;2020-08
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