Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/2/027303/pdf
Reference11 articles.
1. 3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
2. 30-W/mm GaN HEMTs by Field Plate Optimization
3. Evaluation and Application of 600 V GaN HEMT in Cascode Structure
4. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates
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1. Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage;Microsystem Technologies;2024-02-16
2. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors;Microelectronics Journal;2023-09
3. Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation;Electronics;2021-10-28
4. Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications;Journal of Computational Electronics;2021-01-02
5. Performance Enhancement of AlGaN/GaN HEMT by Optimization of Device Parameters Considering Nanometer Barrier Layer Thickness;International Journal of Nanoscience;2020-11-27
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