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Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

  • Published:2012-01 Issue:1 Volume:33 Page:014002
  • ISSN:1674-4926
  • Container-title:Journal of Semiconductors
  • language:
  • Short-container-title:J. Semicond.

Author:

Ma Juncai,Zhang Jincheng,Xue Junshuai,Lin Zhiyu,Liu Ziyang,Xue Xiaoyong,Ma Xiaohua,Hao Yue

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Buffer Al-Content on 2DEG Mobility and Scattering Mechanisms in Double-Heterostructure GaN HEMTs;2024 47th MIPRO ICT and Electronics Convention (MIPRO);2024-05-20

2. Influence of Upper Channel Thickness on InAlN/GaN/InAlN/GaN Double Channel HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs;IEEE Transactions on Electron Devices;2023-11

4. Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors;Electronics;2023-10-27

5. Low stress AlGaN/GaN heterojuction with AlGaN buffer grown on 6-inch semi-insulating SiC substrate;Journal of Crystal Growth;2023-06
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