Polarization engineered enhancement mode GaN HEMT: Design and investigation

Author:

Verma Sumit,Loan Sajad A.,Alharbi Abdullah G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of High Frequency AlGaN/GaN-Based HEMT for Resistive Load Inverter;Lecture Notes in Electrical Engineering;2024

2. Effect of high-k dielectric HfO2 on performance of AlGaN/GaN based MOSHEMT for RF applications;Microsystem Technologies;2023-12-18

3. Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer;Transactions on Electrical and Electronic Materials;2023-05-06

5. Performance Analysis of AlGaN MOSHEMT Based Biosensors for Detection of Proteins;Transactions on Electrical and Electronic Materials;2023-03-18

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