Polarization engineered enhancement mode GaN HEMT: Design and investigation
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference43 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices;Chow;IEEE Trans. Electron. Dev.,1994
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructure;Ambacher;J. Appl. Phys.,1999
3. High performance charge plasma based normally-off GaN MOSFET;Loan;IET Electronic Letters,2016
4. Hybrid AlGaN/GaN high-electron mobility transistor: design and simulation;Verma;IET Circuits, Devices Syst.,2017
5. GaN on Si technologies for power switching devices;Ishida;IEEE Trans. Electron. Dev.,2013
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