Hybrid AlGaN/GaN high‐electron mobility transistor: design and simulation
Author:
Affiliation:
1. Electronics and Communication EngineeringJamia Millia IslamiaNew DelhiIndia
2. Electrical Engineering DepartmentKing Saud UniversitySaudi Arabia
3. Electrical Engineering DepartmentAlJouf UniversitySakakaSaudi Arabia
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2017.0025
Reference27 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
2. Macfarlane D.J.: ‘Design and fabrication of AlGaN/GaN HEMTs with high breakdown voltages’.PhD thesis submitted to the University of Glasgow 2014
3. AlGaN/GaN HEMTs-an overview of device operation and applications
4. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
5. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
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