Efficient wet etching of GaN and p-GaN assisted with chopped UV source
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
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1. High-power phosphor-converted light-emitting diodes based on III-Nitrides
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2. High-Efficiency and High-Quality Photogalvanic Etching of the Silicon Doped N-Type Gallium Nitride Using Potassium Peroxomonosulfate Oxidant;ECS Journal of Solid State Science and Technology;2022-05-01
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4. Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution;Energies;2021-07-14
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