Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126205
Reference2 articles.
1. Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process
2. Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
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1. Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma;Japanese Journal of Applied Physics;2020-05-20
2. Effect of Ar+ ion etching treatment on the surface work function of Hg3In2Te6 wafer;Journal of Electron Spectroscopy and Related Phenomena;2013-04
3. Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements;Semiconductor Science and Technology;2012-08-01
4. Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements;physica status solidi (c);2012-01-26
5. Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate;Vacuum;2012-01
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