Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures-Reference-Cited by-同舟云学术

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Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures

Published:2021-04-28 Issue:16 Volume:129 Page:165701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fariza Aqdas¹²³^ORCID,Ji Xiaoli¹²³,Gao Yaqi¹²³,Ran Junxue¹²³,Wang Junxi¹²³,Wei Tongbo¹²³^ORCID

Affiliation:

1. State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

3. Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing, 100083, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0046560

Reference34 articles.

1. Growth and applications of Group III-nitrides

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

4. Review of technology for normally-off HEMTs with p-GaN gate

5. Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors;Energies;2023-03-24

2. Ordered GaN Nanorod Arrays for Self-Powered Photoelectrochemical Ultraviolet Photodetectors;ACS Applied Nano Materials;2022-08-26

3. Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection;Acta Materialia;2022-08

4. Implementation of Recessed Gate Normally off GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors by Electrodeless Photoelectrochemical Etching;ACS Applied Electronic Materials;2022-02-10

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