Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AlInN on an N-face GaN surface
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates
2. Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities
3. Cathodoluminescence spectral mapping of III-nitride structures
4. Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback
5. F. Rizzi, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin, X.N. Kang, G.Y. Zhang, J. Vac. Sci. Technol. A (submitted for publication)
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1. Influence of 1,2-diaminoethane on the mechanism of aluminium corrosion in sulphuric acid solutions;Corrosion Science;2010-10
2. Optical and structural characterization of AlInN layers for optoelectronic applications;Journal of Applied Physics;2010-09-15
3. Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off;Superlattices and Microstructures;2010-01
4. The role of chelating agents on the corrosion mechanisms of aluminium in alkaline aqueous solutions;Corrosion Science;2009-02
5. Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer;Superlattices and Microstructures;2007-05
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