Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer-Reference-Cited by-同舟云学术

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Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

Published:2007-05 Issue:5-6 Volume:41 Page:414-418
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Rizzi F.,Edwards P.R.,Bejtka K.,Semond F.,Gu E.,Dawson M.D.,Watson I.M.,Martin R.W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback

2. Cavity Polaritons in InGaN Microcavities at Room Temperature

3. GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate

4. Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

5. Room temperature polariton luminescence from a GaN∕AlGaN quantum well microcavity

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective wet etching of AlInN layers for nitride-based MEMS and photonic device structures;SPIE Proceedings;2008-04-25

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