Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off-Reference-Cited by-同舟云学术

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Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off

Published:2010-01 Issue:1 Volume:47 Page:129-133
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Xiong C.,Rizzi F.,Bejtka K.,Edwards P.R.,Gu E.,Dawson M.D.,Martin R.W.,Watson I.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Exciton-polaritons in microcavities: present and future

2. Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

3. (In,Ga)N∕GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

4. GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate

5. Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy;Journal of Crystal Growth;2011-01

2. High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers;Semiconductor Science and Technology;2010-02-05

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